Course Plan

Lecture Plan of Electronic Devices (EC201)

3^rd Sem BTech, ECE

Pre-requisite: Physics

Session : July-Dec 2020

National Institute of Technology Silchar

Course Outcomes (COs)	Topics	Lectures
CO1, CO2	Review of semiconductor Physics: Solids, crystals, energy band, electrons, holes, effective mass, doping, (Bijit) Fermi level, Equilibrium carrier concentration, Direct and indirect semiconductors, Recombination and Generation of carriers, Carrier transport – Drift and Diffusion, mobility, Lifetime Equations of state – Continuity and Poisson equation.Brinda Bhowmick	Lectures 1-10
CO2, CO3	p-n Junctions: Thermal equilibrium conditions, depletion regions, depletion capacitance, current –voltage characteristics, charge storage and transient behavior, junction breakdown (Bijit)	Lectures 11-15
CO3, CO4	Metal-Semiconductor contacts: The Schottky barrier, the ohmic contact and rectifying contacts	Lectures 16,17
CO3, CC4	Metal-Insulator-Semiconductor Capacitors: Introduction, Ideal MIS Capacitor, Silicon MOS capacitor, capacitance voltage characteristics of MOS structure	Lectures 18-22
CO3, CO4	MOSFET: Introduction, MOSFET structure and basic characteristics, Device Scaling and Short –Channel Effects	Lectures 23-28:
CO4, CO5	Bipolar Junction Transistor: The transistor action, static characteristics of BJT, frequency response and switching of BJT, the heterojunction BJT.	Lectures 29-33
CO5	Other devices: LEDs, Solar cells, Solid State Memories.	Lectures 34-40

Course Content

Review of semiconductor Physics: Solids, crystals, energy band, electrons, holes, effective mass, doping, (Bijit)

Fermi level, Equilibrium carrier concentration, Direct and indirect semiconductors, Recombination and Generation of carriers,

Carrier transport – Drift and Diffusion, mobility, Lifetime Equations of state – Continuity and Poisson equation.Brinda Bhowmick

p-n Junctions: Thermal equilibrium conditions, depletion regions, depletion capacitance, current –voltage characteristics, charge storage and transient behavior, junction breakdown

Metal-Semiconductor contacts: The Schottky barrier, the ohmic contact and rectifying contacts Metal-Insulator-Semiconductor Capacitors: Introduction, Ideal MIS Capacitor, Silicon MOS capacitor, capacitance voltage characteristics of MOS structure( Brinda)

MOSFET: Introduction, MOSFET structure and basic characteristics, Device Scaling and Short –Channel Effects (Brinda)

Bipolar Junction Transistor: The transistor action, static characteristics of BJT, frequency response and switching of BJT, the heterojunction BJT.( Brinda)

Other devices: LEDs, Solar cells, Solid State Memories. ( Bijit)

Text / Reference Books

1. Semiconductor Physics and Devices, Donald A Neamen, McGraw-Hill Education

2. Solid State Elect ronics Devices, St reetman and Banerjee, PHI

3. Introduction to Semiconductor Materials and Devices, M. S. Tyagi, Wiley India Pvt Ltd

4. Physics of Semiconductor Devices, S. M. Sze and K. K. Ng, John Wiley & Sons

Course outcome of the subject are:

Graduates will be able to:

CO1: Apply the fundamental knowledge in crystal lattice structure of semiconductor device

CO2:Apply the concepts of drift, diffusion, fermilevel, energy density in PN junction devices

CO3:Determine the physical significance of current conduction in Diode, MOSFET, BJT

CO4: Analyse the band engineering in homo and hetero junction device.

CO5: Demonstrate the static characteristics, frequency response, switching and capacitance voltage characteristics of BJT and MOSFET

The evaluation procedure:

1. Sessional (20 marks): Quiz , class test, Assignment, seminar, Minor Test (10 marks)
2. Midsem: 30 marks
3. End Sem : 50 marks

Mapping of  CO with PO:

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Class Notes & PPTs

1. - PPT