Information
- Designation : Professor
- Email : sb@ece.nits.ac.in
- Phone :
Key Notes
- PhD: Guided: 1
1
DOCTORAL STUDENTS1
PROJECTIntroduction [Biosketch]
- S. Baishya received the B.E. degree in electrical engineering from Assam Engineering College, Guwahati, India, the M.Tech. degree in electrical engineering from the Indian Institute of Technology (IIT), Kanpur, India, and Ph.D. degree in the field of MOS Modeling from Jadavpur University, Kolkata, India, respectively. Currently, he is a Professor in Electronics and Communication Engineering of NIT Silchar, India. His current research interests include the MOS physics and modeling, and MEMS.
Areas of Interest
- Solid State Device Modeling and Simulation, Electronic Circuits, VLSI, and MEMS
| Institution | Year | Degree |
|---|---|---|
| Ph.D. (Engg.) from Jadavpur University, M.Tech. (Electrical Engg) from IIT Kanpur, and B.Tech. (Electrical Engg.) from Assam Engineering College. |
(1) Santosh Kr. Gupta, Thesis Title: Modeling and Simulation of Multi-Gate Multi-Material Transistors, 2013; (2) Brinda Shome (Bhowmick), Thesis Title: Modeling and Simulation of Hetero-gate Dielectric Tunnel FET Structures and Their Mixed-mode Applic
Awards And Honours
- S. Baishya received the B.E. degree in electrical engineering from Assam Engineering College, Guwahati, India, the M.Tech. degree in electrical engineering from the Indian Institute of Technology (IIT), Kanpur, India, and Ph.D. degree in the field of MOS Modeling from Jadavpur University, Kolkata, India, respectively. Currently, he is a Professor in Electronics and Communication Engineering of NIT Silchar, India. His current research interests include the MOS physics and modeling, and MEMS.
