Information
- Designation : Associate Professor
- Email : bbhowmick@ece.nits.ac.in
- Phone :
Key Notes
- Conference: International - 3
- Journals: 23
- Conferences: 3
- Patents: 4
26
PUBLICATIONS4
PATENTS2
PROJECTSIntroduction [Biosketch]
- Brinda Bhowmick (Shome) did her B.E. in 2001 with first class honours (80.8%), M.Tech. in 2004 with first class distinction ( 86.6%), and Ph.D. degree in 2014 in Microelectronics area. She passed 10th exam (HSLC) in 1995 ( 83.4%) and 12th Exam (HSS) in 1997 (76%).
- Currently, she is a Professor in Electronics and Communication Engineering Department of NIT Silchar since July 2022. She has 20 years teaching experience. She achieved Visvesvaraya Young Faculty Research Fellowship in January 2018 from MeitY Government of India. She has authored 131 SCI/ SCIE International Journal papers, 39 conference papers, 19 book chapters and published two patents and four patents are in granted status. She has authored one book in Cambridge Scholars publisher UK. Eleven Ph.D. scholars are awarded Ph.D. degree under her guidance and four are currently doing PhD under her guidance. She has supervised 26 PG theses and 27 UG projects. She has completed her tenure of Associate Dean ( Faculty Welfare) from Jan 2021 to Jan 2023. Currently she is the Dean ( Academic) of National Institute of Technology since 25th Sept 2023.
- Her research interest is simulation and modelling of various semiconductor devices like TFET, SBMOS, FINFET, Graphene FET, Tunnel diode including Group III-V materials, 2D materials, and their applications in analog and digital circuits and sensors.
Areas of Interest
- Semiconductor Devices Physics, Modeling and Simulation of low power and high power semiconductor devices, analog circuits, application of semiconductor devices as Bio sensor and Light sensor
| Institution | Year | Degree |
|---|---|---|
| 2001 | B.E Hons | |
| 2004 | MTech | |
| 2014 | Ph. D. |
Teaching Experience
NIT Silchar
George Mili, B Bhowmick, “Comprehensive Electro thermal Performance of DGOHSS-nTFET: Leveraging Dual Gate Oxide and Hetero-Stacked Sources for Enhanced Current Control,”, In Proceedings MNDCS 2025, January 29th 2025, 2025, NIT Silchar, Springer, Indexed in Scopus
| Sl.No | Course Name | Semester | Course Code | Duration | Status |
|---|---|---|---|---|---|
| 1 | Electronic Devices | B.Tech | EC201 | one semester | Completed |
| 2 | Analog IC Design | B.Tech | Ec1442 | one semester | Completed |
| 3 | Control system | B.Tech | EC1310 | one semester | Completed |
| 4 | Semiconductor Device Physics | M.Tech | EC5201 | 6 months | Completed |
| 5 | Advanced CMOS Devices And Technology | M.Tech | EC5263 | 6 months | Completed |
| 6 | Analog IC and Technology | B.Tech | EC303 | 6 months | Completed |
| 7 | Electromagnetic field theory and wave propagation | B.Tech | EC205 | 6 months | Completed |
Awards And Honours
- PATENT(S)
- Indian Patent filed and Published ( Inventors: Rupam Goswami, Vivek Mate, D Borah, B Bhowmick) on SYSTEM, METHOD AND APPARATUS FOR GENERATING TRUE RANDOM NUMBER FOR IDENTIFICATION AND VERIFICATION :No.201731000942, dated 31/08/2018
- Indian patent filed and Published ( Inventors:Brinda Bhowmick, Rajesh Saha, Siddhartha Singh, Utkarsh Bhatt) on Portable system for fast detection of PQRS and T wave ECG signals, application no.201931027301 dated 8/7/2019
- German patent Granted ( Inventors: Abinash Panda, Puspa Devi, Brinda Bhowmick )” A SYSTEM FOR DESIGNING A NOVEL HIGHLY SENSITIVE HYBRID SURFACE PLASMON RESONANCE (SPR) BIOSENSOR,” No.20202210074 in 2021
- German patent Granted ( Inventors: Ravindra Kumar Maurya, Brinda Bhowmick, Rajesh Saha) Title: A System for Developing and Analyzing a Parameter of Bohm Quantum Potential (BQP) Device” No.202022105580 in 2022.
- South African Patent Granted ( Inventors: Zohmingliana, Brinda Bhowmick, Bijit Choudhury) Title: A Device for Designing and Analysising Double Gate Dual Material Vetical Nano ribbon Graphene TFET, No 2022/10999, 2022
- German Patent Granted (Brinda Bhowmick ) Title: A Tunnel Field Effect Transistor (TFET) Based Optical Sensor Device with Photosensitive Gate, No.202023107715, 2024
- Others :
- GATE-EC 2002 Qualified (1530 All India Ranking in EC)
- First Class First in B.E. (EE) from Regional Engineering College Silchar in 2001
- VIFA 2016 award outstanding teacher winner
- Sir Visvesvaraya Young Faculty Research Fellowship winner 2018, MeitY Govt. of India
- Reviewer of Many reputed SCI and SCIE journals like IEEE transaction on electron Device, ECS journal, Journal of Computational Electronics, IEEE sensors Journal, International Journal of Numerical Modelling, International Journal of Electronics, Physica Scripta, Silicon, IEEE Transactions on Nano Technology etc.
- Resource person/Invited talks in various workshop/short term courses and chaired/ Co chaired many technical sessions
- SPECIAL MERIT SCHOLARSHIP BASED ON STATE LEVEL EXAMINATION in 1995, Assam Government ( 10th exam, HSLC)
- SPECIAL MERIT SCHOLARSHIP BASED ON STATE LEVEL EXAMINATION in 1997, Assam Government (12th exam, HS)
- 4th POSITION IN SPECIAL MERIT SCHOLARSHIP EXAMINATION IN KARIMGANJ DISTRICT OF ASSAM in 1992, district level inspector of schools ( standard 7)
A Device for Designing and Analysising Double Gate Dual Material Vetical Nano ribbon Graphene TFET
“A SYSTEM FOR STUDYING AND PERFORMING THE PART-OF-SPEECH TAGGING FOR MIZO LANGUAGE”
South Africa
Patent
Registration ID, 2022/10999
A Device for Designing and Analysising Double Gate Dual Material Vetical Nano ribbon Graphene TFET, (**GRANTED**)
A SYSTEM FOR DESIGNING A NOVEL HIGHLY SENSITIVE HYBRID SURFACE PLASMON RESONANCE (SPR) BIOSENSOR
“A SYSTEM FOR STUDYING AND PERFORMING THE PART-OF-SPEECH TAGGING FOR MIZO LANGUAGE”
Germany
Patent
Registration ID, 20 2023 100 328
A SYSTEM FOR DESIGNING A NOVEL HIGHLY SENSITIVE HYBRID SURFACE PLASMON RESONANCE (SPR) BIOSENSOR, (**GRANTED**)
A System for Developing and Analyzing a Parameter of Bohm Quantum Potential (BQP) Device
“A SYSTEM FOR STUDYING AND PERFORMING THE PART-OF-SPEECH TAGGING FOR MIZO LANGUAGE”
Germany
Patent
Registration ID, 20 2022 105 580
A System for Developing and Analyzing a Parameter of Bohm Quantum Potential (BQP) Device, (**GRANTED**)
A Portable system for fast detection of PQRS and T wave ECG signals
“A SYSTEM FOR STUDYING AND PERFORMING THE PART-OF-SPEECH TAGGING FOR MIZO LANGUAGE”
Indian
Patent
Registration ID, 201931027301
A Portable system for fast detection of PQRS and T wave ECG signals, (**GRANTED**)
Sl.No: 1
Title Of Research Project: " Visvesvaraya Young Faculty Research Fellowship Award by Ministry of Electronics and Information Technology "
Sponsored By: MeitY
Overall Budget: Rs 1660000
Status: Completed
Principal Investigator: Brinda Bhowmick
Sl.No: 2
Title Of Research Project: " Hetero-Junction Tunnel FETs: Characterization, Modelling and Simulation of Electrical parameters "
Sponsored By: CSIR
Overall Budget: Rs 9.54 lakhs
Duration: Jul 20, 2017 - Mar 31, 2020 (2 years 8 months 11 days)
Status: Completed
Principal Investigator: S Baishya
Co Principal Investigator: Brinda Bhowmick
| Sl.No | Award/Recognition/Achievement | Year | Approved agency |
|---|---|---|---|
| 1 | Visvesvaraya Young faculty Research Fellow | 2018 | Meity, Govt. of India |
| 2 | GATE EC 2002 qualified | ||
| 3 | Dean ( Academic) | 2023 | NIT Silchar |
| 4 | VIFA outsyanding faculty | 2016 | Venus International Faculty Award |
| Sl.No | Course Title | Resource Person | Documents | Area | Funding Agency | Date |
|---|---|---|---|---|---|---|
| 1 | Sexual Harassment of women at work place, NIT Silchar, Silchar, Institute Fund, Oct 2015, organized on behalf of ICC NIT Silchar | Lawyer Bithika Acharya, India | Women right related | Meity | Oct 03 2017 | |
| 2 | Recent trends in Embedded System and its application | Prof. KK Sharma, Prof. Subhas, India | Embedded system | TEQIP III | Sep 27 2012 | |
| 3 | Emerging Devices, Circuits and Systems (EDCS 2019) | Dr. S C Nandi- Indian Statistical Institute Kolkata 2. Prof. Abhijit Mallik - University of Calcutta 3. Dr. Roy P.Paily- IIT Guwahati 4. Dr. Tanmoy Banerjee , Burdwan University 5.Dr. Saurabh Pandey, IIT Patna, India | Emerging Devices, VLSI | TEQIP III | Jan 21 2019 |
